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| VBO 125 Single Phase Rectifier Bridge IdAVM = 124 A VRRM = 1200-1800 V - VRSM V 900 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type + VBO VBO VBO VBO VBO 125-08NO7 125-12NO7 125-14NO7 125-16NO7 125-18NO7 ~ ~ - ~ + ~ Maximum Ratings 124 A A A A A A2s A2s A2s A2s C C C V~ V~ Nm lb.in. Nm lb.in. g Features * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Symbol IdAVM IFSM Conditions TC = 85C, module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1950 1600 1800 16200 16000 12800 13600 -40...+150 150 -40...+150 I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 2500 3000 5 44 5 44 15% 15% 15% 15% 225 Mounting torque (M5) Terminal connection torque (M5) Dimensions in mm (1 mm = 0.0394") Weight Symbol IR VF VT0 rT RthJC RthJK typ. Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25C TVJ = TVJM TVJ = 25C Characteristic Values 0.3 8.0 1.3 0.8 3 0.83 0.138 1.13 0.188 mA mA V V m K/W K/W K/W K/W For power-loss calculations only TVJ = TVJM per per per per diode; 180 module; 180 diode; 180 module; 180 Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 1-2 (c) 2003 IXYS All rights reserved 316 VBO 125 200 A I F(OV) -----I FSM 10 IFSM (A) TVJ=45C TVJ=150C 1600 1800 5 2 As 160 T=150C 1.6 1.4 120 1.2 10 4 TVJ=45C 80 1 0 V RRM TVJ=150C 0.8 40 T=25C IF 0.6 1/2 V RRM 1 V RRM 0 VF 1 1.5 V 0.4 10 0 1 2 10 t[ms] 10 10 3 10 3 1 2 4 t [ms] 6 10 Fig. 1 Forward current versus voltage drop per diode 300 [W] Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 85 Fig. 3 i2dt versus time (1-10ms) per diode or thyristor 150 [A] DC sin.180 rec.120 rec.60 rec.30 PSB 125 0.19 0.11 = RTHCA [K/W] 0.28 90 95 100 250 100 200 0.44 105 110 150 0.77 115 120 125 50 100 DC sin.180 1.77 130 135 140 IdAV 0 50 100 TC(C) 150 200 50 PVTOT 0 rec.120 rec.60 rec.30 145 F4 C 150 50 IFAVM 100 [A] 0 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 1.5 K/W Z thJK 1 Z thJC 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 2-2 316 |
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